Prof. Yury Illarionov was born in Leningrad (now St. Petersburg) in 1988. He studied solid state physics at Peter the Great St. Petersburg Polytechnic University (Russia), where he received the B.Sc. and M.Sc. degrees in 2009 and 2011, respectively. From 2010 to 2012, he studied advanced material science at Grenoble INP (France) and the University of Augsburg (Germany) in the framework of the Functionalized Advanced Materials and Engineering (FAME) Erasmus Mundus program, and in September 2012, received a double European M.Sc. degree. In January 2015, he received his Ph.D. in semiconductor physics from the Ioffe Institute (Russia), and in December 2015, his second Ph.D. from TU Wien (Austria). From 2016 to 2022, he worked as a postdoctoral researcher at the Institute for Microelectronics of TU Wien (Austria), which has been known as a strong TCAD modeling center but, due to Yury’s work, also became recognized for pioneering research on 2D electronics. Prof. Yury Illarionov has already coauthored more than 100 publications, including papers in top journals like Nature Electronics, Nature Communications, Advanced Materials, and ACS Nano, among others (>25 as the first or corresponding author). In 2020, he received the IEEE Senior Member title and also served as an official Russian delegate for the BRICS Young Scientist Forum. He also has a very broad international collaboration network, which includes top scientists from Russia, China, the USA, Germany, and other countries. Prof. Yury Illarionov joined SUSTech as a faculty member in April 2023. He was also named to the Stanford and Elsevier "World's Top 2% Scientists" list in both 2024 and 2025.

• 2D Optoelectronics and Nanoelectronics

2015

Dr. tech., Technical Sciences

Technical University of Vienna (TU Wien), Vienna, Austria

2015

Ph.D., Physical and Mathematical Sciences (Semiconductor Physics)

Ioffe Institute, St. Petersburg, Russia

2012

European Master of Science in Advanced Materials Science Erasmus Mundus FAME Master Program

Grenoble INP, France (2010–2011) and University of Augsburg, Germany (2011–2012)

 2011

M.Sc., Engineering and Technology (Technical Physics) [with Honors]

St-Petersburg State Polytechnical University (Faculty of Physics and Technologies, Department of Solid State Physics)

2009

B.Sc., Engineering and Technology (Technical Physics) [with Honors]

St-Petersburg State Polytechnical University (Faculty of Physics and Technologies, Department of Solid State Physics)

June 2023 until now   Associate professor  MSE, Southern University of Science and Technology

April. 2023- June 2023  Assistant professor  MSE, Southern University of Science and Technology

Jan. 2016– Dec. 2022   Postdoctoral researcher, Institute for Microelectronics, Technical University of Vienna (TU Wien), Vienna, Austria

* World's Top 2% Scientists" list by Stanford/Elsevier, 2025

* World's Top 2% Scientists" list by Stanford/Elsevier, 2024

* Vice Chair of the Electronic Materials Committee in IEEE Electron Devices Society, 2024

* IEEE Senior Member, USA, 2022

* Nature Communications paper featured by Editors & in top 50 Physics papers of 2020

* Member of Russian delegation in BRICS Young Scientist Forum (Material Science panel), 2020

* Erasmus Mundus scholarship award by the European Commission, 2010

2026  Waqas Ahmad* Umer Younis, Muhammad Zubair Nawaz, Vijay Laxmi, Jinying Zhang, Wen Lei Qiandong Zhuang*Zhiming Wang*Yury Yuryevich Illarionov*“Interface Engineering with Graphene Contacts in VP/MoS2 Heterostructures for High-Performance, Durable, and Multispectral Photodetection” ACS Applied Materials & Interfaces, IF=8.5

2026  Jianming Huang, Arijit Sarkar, Yajing Chai, Yezhu Lv, Haihui Cai, Yehao Wu, Tania Roy*, Yury Yuryevich Illarionov*, “Long-Term Operational Stability of Dual-Gated ITO/HfO2 Field-Effect Transistors via Full Top-Gate Coverage: A Comprehensive Bias-Stress Mapping“, ACS nano, IF = 16.6

2026  Waqas Ahmad*, Majeed Ur Rehman, Qiandong Zhuang, Jinying Zhang, Wen Lei, Zhiming Wang, and Yury Illarionov*, “Engineering in 2D Violet Phosphorus/PdSe2 Van der Waals Heterostructures for Advanced Optoelectronics”, Communications Materials, IF = 9.6