Dr. Mengyuan Hua aims to realize high-performance GaN-based power electronic devices. Her research covers semiconductor surface physics, interface state suppression techniques, and novel power electronic devices, leading to new breakthroughs in GaN-based power electronic devices featuring high threshold voltage, low conduction loss, large threshold swing, and long operating lifetime, with device performance at the international leading level. In the past five years, she has published 22 SCI papers as the first or corresponding author, including 4 papers in IEEE Electron Device Letters (a top journal in the device field), 1 cover article in Advanced Materials, and 1 paper in Physical Review Letters. She has also published 2 papers at IEDM (the top international conference in the device field) and 8 papers at ISPSD (the top international conference in power semiconductors). In total, she has published more than 110 papers in international journals and conferences. Her publications have received 4,461 total citations (as of August 2025), with an H-index of 35 and a maximum single citation of 134 for her first-author paper. Her research has been featured in special reports by internationally renowned semiconductor review magazines Semiconductor Today and Compound Semiconductor on multiple occasions. Dr. Hua has delivered 8 invited talks at national and international academic conferences in the field and has filed or been granted 5 national invention patents. She received the Best Young Scientist Paper Award at IEEE ICSICT in 2020. In 2021, she was invited by Editor-in-Chief Prof. Giovanni Ghione to serve as an editor of IEEE Transactions on Electron Devices, a prestigious international journal in the field. She was a member of the Technical Program Committee of IEEE IEDM, the top international conference in the device field, from 2024 to 2025. In 2023, she was awarded the National High-Level Talent Special Support Program for Young Top-notch Talent.

• Wide Bandgap Semiconductor Devices

• GaN-based Power Electronic Devices

• Semiconductor Device Processing Technology

• Physics and Reliability of Semiconductor Devices

• Power Integrated Circuits (Power ICs)

• Applications of New-Generation Miniaturized Power Supplies

2013–2017 Ph.D. in Electronic and Computer Engineering,

The Hong Kong University of Science and Technology (HKUST)

2009–2013 B.S. in Mathematics and Physics Program, Tsinghua University

May 2024 – Present,

Tenure‑Associate Professor / Researcher,

Department of Electrical and Electronic Engineering,

Southern University of Science and Technology (SUSTech)

Sep 2018 – Apr 2024,

Assistant Professor / Associate Researcher,

Department of Electrical and Electronic Engineering,

Southern University of Science and Technology (SUSTech)

Sep 2017 – Sep 2018

Postdoctoral Fellow,

Department of Electronic and Computer Engineering,

The Hong Kong University of Science and Technology (HKUST) 

National High-Level Talent Special Support Program, 2023

IEEE ICSICT Outstanding Young Scientist Paper Award, 2020

Shenzhen Overseas High-Caliber Talent Program (Peacock Plan), 2019

Golden Reviewer, IEEE Transactions on Electron Devices (TED), 2018–2023

Golden Reviewer, IEEE Electron Device Letters (EDL), 2019–2023

IEEE ISPSD Best Young Scholar Award (sole recipient of the year), 2017

[1] J. Tang#, Z. Jiang#, C. Wang, J. Chen, H. Chen, Y. Zhang, Z. Zheng, X. Wang, J. Ma, J. Zhao, J. Liu, Q. Sun, and M. Hua*, "Bipolar p-FET with Enhanced Conduction Capability on E-mode GaN-on-Si HEMT Platform," in 2023 IEEE International Electron Devices Meeting (IEDM), December 9-13, 2023.

[2] M. Hua*, J. Chen, C. Wang, L. Liu, J. Wei, L. Zhang, Z. Zheng, and K. Chen, "E-mode p-FET-bridge HEMT for Higher VTH and Enhanced Stability," in 2020 IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, December 12-18, 2020.

[3] J. Chen, J. Zhao, S. Feng, L. Zhang, Y. Cheng, H. Liao, Z. Zheng, X. Chen, Z. Gao, K. Chen, and M. Hua*, "Formation and applications in electronic devices of lattice-aligned gallium oxynitride nanolayer on gallium nitride," in Advanced Materials, vol. 35, no. 12, pp. 2208960, Jan. 2023.

[4] J. Zhao*, J. Fernández, A. Azarov, R. He, Ø. Prytz, K. Nordlund, M. Hua*, F. Djurabekova, and A. Kuznetsov*, "Crystallization Instead of Amorphization in Collision Cascades in Gallium Oxide," in Physical Review Letters, 134, 126101, Mar. 2025.

[5] Z. Jiang, X. Wang, J. Zhao, J. Chen, J. Tang, C. Wang, H. Chen, S. Huang, X. Chen, and M. Hua*, "Roles of Hole Trap on Gate Leakage of p-GaN HEMTs at Cryogenic Temperatures," in IEEE Electron Device Letters, vol. 44, no. 10, pp. 1612-1615, Oct. 2023.