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Office:ShanghaiTech University SPST 5-403E
Tel: +86-021-20685482
E-mail: yanshch@shanghaitech.edu.cn
Shichao Yan, Associate Professor at School of Physical Science and Technology, ShanghaiTech University
Scanning tunneling microscopy
correlated electron system
unconventional superconductivity
2006-2012:Institute of Physics, Chinese Academy of Sciences, Ph.D.
2008-2009:University of California, Irvine, Visiting student
2002-2006:Shandong University, Bachelor
2017-Now: School of Physical Science and Technology, Assistant Professor, Associate Professor
2015-2017: University of Illinois Urbana-Champaign, Postdoc
2012-2015: Max-Planck Institute, Postdoc
2024 Shanghai Oriental Talents Program (Leading Project)
2018 Shanghai Rising-Star Program (Category A)
2017 National Overseas High-level Talent Recruitment Program (Youth Project)
Research ID: https://orcid.org/0000-0002-7318-300X
* Corresponding authors
# Equally contributed authors
(1) H. Liu#, W. Li#, Z. Zhou#, H. Qu#, J. Zhang, W. Hu, C. Wen, N. Wang*, H. Deng*, G. Li*, S. Yan*, “Direct Evidence of Intrinsic Mott State and Its Layer-parity Oscillation in a Breathing Kagome Crystal down to Monolayer”
Physical Review Letters 135, 076503 (2025)
(2) Z. Yang#, F. Zheng#, D. Wu#, B. Zhang#, N. Li, W. Li, C. Zhang*, G. Zhang, X. Chen, Y. Chen*, S. Yan*, “Spectroscopic Evidence of Symmetry Breaking in the Superconducting Vortices of UTe2”
National Science Review 12, nwaf267 (2025)
(3) C. Wen#, T. Qin#, X. Zhang#, M. Zhang#, W. Hu, S. Shen, Z. Yang, Y. Qi*, G. Li*, S. Yan*, “Probing Hidden Mott Gap and Incommensurate Charge Modulation on the Polar Surfaces of PdCrO2”
Physical Review Letters 131, 116501 (2023)
(4) S. Shen, C. Wen, P. Kong, J. Gao, J. Si, X. Luo, W. Lu, Y. P. Sun, G. Chen, S. Yan*, “Inducing and Tuning Kondo Screening in a Narrow-Electronic-Band System”
Nature Communications 13, 2156 (2022)
(5) C. Wen, J. Gao, Y. Xie, Q. Zhang, P. Kong, J. Wang, Y. Jiang, X. Luo, J. Li, W. Lu, Y. Sun*, S. Yan*, “Roles of the Narrow Electronic Band near the Fermi Level in 1T-TaS2-Related Layered Materials”
Physical Review Letters 126, 256402 (2021)